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New Vishay Siliconix SiRA20DP TrenchFET® Gen IV N-Channel MOSFET Increases Power Density While Cutting Condition Power Loss
December 24, 2019 - New Yorker Electronics is now distributing a Vishay N-Channel MOSFET that provides the lowest maximum RDS(on) rating at VGS = 10V and increases power density as the RDS(on) cuts conduction power loss. The Vishay Siliconix SiRA20DP TrenchFET® Gen IV N-Channel MOSFET provides the lowest gate charge (Qg) for devices with maximum RDS(on) <0.6mΩ, thus enabling high efficiency for DC/DC conversion.
The Vishay SiRA20DP N-Channel 25V device also features a gate-drain charge/gate-source charge ratio that reduces switching related power loss. The Vishay Siliconix SiRA20DP N-Channel 25V MOSFET reaches the lowest RDS(ON) in its class by reducing any switching-related power loss. This is achieved by optimizing the total gate charge (Qg), gate-drain charge (Qgd) and Qgd/gate-source charge (Qgs) ratio. The very low Qgd Miller Effect charge enables passing through plateau voltage faster.
The SiRA20DP is a 100% Rg and UIS tested TrenchFET Gen IV MOSFET. Typical applications include synchronous rectification, high power density DC/DC, synchronous buck converter, OR-ing, load switching and battery management.The Vishay MOSFET is housed in the conventional PowerPAK® SO-8 design, delivering higher power density with no change to its package dimension or its pin configuration. A 10mil clip reduces any package-contributed resistance by 66-percent, maximizing the performance of the silicon.
New Yorker Electronics also stocks the original N-Channel TrenchFET Gen IV MOSFET in 25V, 30V, 35V and 40V. New Yorker Electronics is a franchise distributor for Vishay Siliconix and carries the full line of Vishay discrete semiconductors (diodes, MOSFET transistors and infrared optoelectronics) and passive electronic components (resistors, inductors and capacitors).
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